2n5210/mmbt5210 npn general purpose amplifier this device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 a to 50 ma. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. thermal characteristics ta = 25c unless otherwise noted symbol parameter value units v ceo collector-emitter voltage 50 v v cbo collector-base voltage 50 v v ebo emitter-base voltage 4.5 v i c collector current - continuous 100 ma t j , t st g operating and storage junction temperature range -55 to +150 c 2n5210, rev b max. symbol characteristic 2n5210 mmbt5210 units p d total device dissipation derate above 25 c 625 5.0 350 2.8 mw mw/ c r jc thermal resistance, junction to case 83.3 c/w r ja thermal resistance, junction to ambient 200 357 c/w ? 2002 fairchild semiconductor corporation 2n5210/mmbt5210 c b e sot-23 mark: 3m c b e to-92
3 electrical characteristics ta = 25c unless otherwise noted off characteristics symbol parameter test conditions min max units v ( br ) ceo collector-emitter breakdown voltage i c = 1.0 ma, i b = 0 50 v v ( br ) cbo collector-base breakdown voltage i c = 0.1 ma, i e = 0 50 v i cbo collector cutoff current v cb = 35 v, i e = 0 50 na i ebo emitter cutoff current v eb = 3.0 v, i c = 0 50 na on characteristics h fe dc current gain i c = 100 a, v ce = 5.0 v i c = 1.0 ma, v ce = 5.0 v i c = 10 ma, v ce = 5.0 v* 200 250 250 600 v ce( sat ) collector-emitter saturation voltage i c = 10 ma, i b = 1.0 ma 0.7 v v be( on ) base-emitter on voltage i c = 1.0 ma, v ce = 5.0 v 0.85 v small signal characteristics f t current gain - bandwidth product i c = 500 a,v ce = 5.0 v, f= 20 mhz 30 mhz c cb collector-base capacitance v cb = 5.0 v, i e = 0, f = 100 khz 4.0 pf h fe small-signal current gain i c = 1.0 ma, v ce = 5.0 v, f = 1.0 khz 250 900 nf noise figure i c = 20 a, v ce = 5.0 v, r s = 22 k ? , f = 10 hz to 15.7 khz i c = 20 a, v ce = 5.0 v, r s = 10 k ? , f = 1.0 khz 2.0 3.0 db db * pulse test: pulse width 300 s, duty cycle 2.0% npn general purpose amplifier (continued) 2n5210/mmbt5210
typical characteristics collect or-cutoff current vs ambient temperature 25 50 75 100 125 150 0. 1 1 10 t - a mbi e nt t emp er at ur e ( c) i - c o l le ct o r cu rr en t ( n a) a cbo v = 45v cb 2n5210/mmbt5210 npn general purpose amplifier (continued) 0.01 0.1 1 10 100 0 200 400 600 800 1000 1200 30 3 0.3 0.03 - 40 o c 25 o c 125 o c v ce = 5.0v h fe - typical pulsed current gain i c - collector current (ma) typical pulsed current gain vs collector current 0.1 1 10 100 0.05 0.10 0.15 0.20 0.25 0.30 - 40 o c 25 o c 125 o c = 10 v beon - base-emitter on voltage (v) i c - collector current (ma) collector-emitter saturation voltage vs collector current 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 = 10 125 o c 25 o c - 40 o c v besat - collector-emitter voltage (v) i c - collector current (ma) base-emitter saturation voltage vs collector current 0.1 1 10 0.2 0.4 0.6 0.8 1.0 - 40 o c 25 o c 125 o c v ce = 5.0v v beon - base-emitter on voltage (v) i c - collector current (ma) base-emitter on voltage vs collector current
3 typical characteristics (continued) npn general purpose amplifier (continued) input and output capacitance vs reverse bias voltage 048121620 0 1 2 3 4 5 reverse bias voltage (v) capacitance (pf) f = 1.0 mhz c ob c te wideband noise frequency vs source resistance 1,000 2,000 5,000 10,000 20,000 50,000 100,000 0 1 2 3 4 5 r - source resistance ( ) nf - noise figure (db) v = 5.0 v bandwidt h = 15.7 khz ce i = 10 a c i = 100 a c s ? ? ? ? i = 30 a c contours of constant gain bandwidth product (f ) 0.1 1 10 100 1 2 3 5 7 10 i - collector current (ma) v - collector voltage (v) c 175 mhz t ce 150 mhz 125 mhz 75 mhz 100 mhz noise figure vs frequency 0.0001 0.001 0.01 0.1 1 10 100 0 2 4 6 8 10 f - frequency (mhz) nf - noise figure (db) v = 5.0v ce i = 200 a, r = 10 k ? ? ? ? c s i = 1.0 ma, r = 500 ? ? ? ? c s i = 100 a, r = 10 k ? ? ? ? c s i = 1.0 ma, r = 5.0 k ? ? ? ? c s normalized collect or-cutoff current vs ambient temperature 25 50 75 100 125 150 1 10 10 0 1000 t - ambie nt temperature ( c) ch ar ac ter is tic s r elati ve to valu e at t = 25 c a a 025507510012515 0 0.00 0.25 0.50 0.75 1.00 to-92 sot-23 p d - power dissipation (w) temperature ( o c) base-emitter saturation voltage vs collector current 2n5210/mmbt5210
typical characteristics (continued) contours of constant narrow band noise figure 1 10 100 1,000 100 200 500 1,000 2,000 5,000 10,000 i - collector current ( a) r - source resistance ( ) c ? ? ? ? s v = 5.0 v f = 1.0 khz bandwidth = 200 hz ce 6.0 db 3.0 db 4.0 db 8.0 db 2.0 db contours of constant narrow band noise figure 1 10 100 1,000 100 200 500 1,000 2,000 5,000 10,000 i - collector current ( a) r - source resistance ( ) c ? ? ? ? s v = 5. 0 v f = 100 hz bandwidth = 20 hz ce 3.0 db 4.0 db 8.0 db 10 db 12 db 14 db 6.0 db contours of constant narrow band noise figure 1 10 100 1000 100 200 500 1000 2000 5000 10000 i - collector current ( a) r - source resistance ( ) 6.0 db 3.0 db 4.0 db 8.0 db 2.0 db 1.0 db c v = 5.0v f = 10khz bandwidth = 2.0khz ce ? ? ? ? s contours of constant narrow band noise figure 0.01 0.1 1 10 100 200 500 1000 2000 5000 10000 i - collector current ( a) r - source resistance ( ) 7.0 db 3.0 db 4.0 db 8.0 db 2.0 db 5.0 db c v = 5.0v ce ? ? ? ? s f = 1.0 mhz bandwidth = 200khz 6.0 db npn general purpose amplifier (continued) 2n5210/mmbt5210
3 typical common emitter characteristics (f = 1.0 khz) npn general purpose amplifier (continued) typical common emitter characteristics 0.1 0.2 0.5 1 2 5 10 20 50 100 0.01 0.1 1 10 100 i - collector current (ma) characteristics relative to value(i =1ma) c c f = 1.0khz h oe h oe h and h ie h fe h re h ie h fe re typical common emitter characteristics -100 -50 0 50 100 150 0. 5 0. 6 0. 7 0. 8 0. 9 1 1. 1 1. 2 1. 3 1. 4 1. 5 t - j u nc t io n t emp er at ur e ( c) c ha ra cte ri stic s re lativ e to va lue (t =25 c ) j a h oe h re h ie h fe h oe h re h ie h fe v = 5.0v f = 1.0khz i = 1.0ma ce c typical common emitter charact eristics 0 5 10 15 20 25 0. 8 0. 9 1 1. 1 1. 2 1. 3 1. 4 v - collector voltage (v) c h ar ac ter isti cs r elati ve to valu e( v =5v) ce ce i = 1.0ma f = 1.0khz t = 25 c c a h oe h oe h re h ie h fe h re h ie h fe 2n5210/mmbt5210
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careers | sitema go datasheets, samples, buy technical information applications design center support company investors my f a home >> find products >> product status/pricing/packaging 2n5210 npn general purpose amplifier general description back to top contents ? general description ? product status/pricing/packaging ? order samples ? models ? qualification support this device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1a to 50 ma. datasheet download this datasheet e - mail this datasheet this page print version product product status pb-free status pricing* package type leads packing method package marking convention** 2n5210bu full production $0.0238 to - 92 3 bulk line 1: 2n line 2: 5210 line 3: -&3 2N5210NMBU full production $0.0238 to - 92 3 bulk n/a 2n5210ta full production $0.0238 to - 92 3 ammo line 1: 2n line 2: 5210 line 3: -&3 2n5210tar full production $0.0238 to - 92 3 ammo line 1: 2n line 2: 5210 line 3: -&3 related links request samples how to order products product change notices (pcns) support sales support quality and reliability design cente r pa g e 1 of 3 product folder - fairchild p/n 2n5210 - npn general pur p ose am p lifie r 16-au g -2007 mhtml:file://c:\temp\2N5210NMBU.mht
back to top models back to top qualification support click on a product for detailed qualification data 2n5210tf full production $0.0238 to - 92 3 tape reel line 1: 2n line 2: 5210 line 3: -&3 2n5210tfr full production $0.0238 to - 92 3 tape reel line 1: 2n line 2: 5210 line 3: -&3 2n5210_d81z full production n/a to - 92 3 tape reel line 1: $y (fairchild logo) & z (asm. plant code) & 3 (3-digit date code) line 2: 2n line 3: 5210 2n5210_j05z full production n/a to - 92 3 bulk line 1: $y (fairchild logo) & z (asm. plant code) & 3 (3-digit date code) line 2: 2n line 3: 5210 * fairchild 1,000 piece budgetary pricing ** a sample button will appear if the part is available through fa irchild's on-line samples program. if there is no sample butt on, please contact a fairchild distributo r to obtain samples indicates product with pb -free second-level interconne ct. for more information click here. package marking information for product 2n5210 is available. click here for more information . package & leads condition temperature range software version revision date pspice to-92-3 electrical 25c n/a n/a pa g e 2 of 3 product folder - fairchild p/n 2n5210 - npn general pur p ose am p lifie r 16-au g -2007 mhtml:file://c:\temp\2N5210NMBU.mht
back to top product 2n5210bu 2N5210NMBU 2n5210ta 2n5210tar 2n5210tf 2n5210tfr 2n5210_d81z 2n5210_j05z ? 2007 fairchild semiconductor products | design center | support | company news | investors | my fairchild | contact us | site index | privacy policy | site terms & conditions | standard terms & conditions o pa g e 3 of 3 product folder - fairchild p/n 2n5210 - npn general pur p ose am p lifie r 16-au g -2007 mhtml:file://c:\temp\2N5210NMBU.mht
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